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| Power Transistors 2SB954, 2SB954A Silicon PNP epitaxial planar type For power amplification s Features q q q Unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 s Absolute Maximum Ratings (TC=25C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings -60 -80 -60 -80 -5 -2 -1 30 2 150 -55 to +150 Unit V 2SB954 2SB954A 2SB954 14.00.5 base voltage Collector to emitter voltage 2SB954A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V A A W C C Solder Dip 4.0 Collector to 16.70.3 7.50.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB954 2SB954A 2SB954 2SB954A 2SB954 2SB954A (TC=25C) Symbol ICEO ICES IEBO VCEO hFE1* hFE2 VCE(sat) VBE fT ton tstg tf Conditions VCE = -30V, IB = 0 VCE = -60V, IB = 0 VCE = -60V, VBE = 0 VCE = -80V, VBE = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VCE = -4V, IC = - 0.2A VCE = -4V, IC = -1A IC = -1A, IB = - 0.125A VCE = -4V, IC = -1A VCE = -5V, IC = - 0.2A, f = 10MHz IC = -1A, IB1 = - 0.1A, IB2 = 0.1A, VCC = -50V 30 0.5 1.2 0.3 -60 -80 70 15 -1 -1.3 V V MHz s s s 250 min typ max -300 -300 -200 -200 -1 Unit A A mA V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 1 Power Transistors PC -- Ta 50 -2.5 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) IB=-40mA -30mA -25mA -1.5 -20mA -10mA -1.0 -8mA -6mA -4mA -2mA TC=25C 2SB954, 2SB954A IC -- VCE -10 VCE=-4V IC -- VBE Collector power dissipation PC (W) Collector current IC (A) 30 Collector current IC (A) 40 -2.0 -8 -6 25C TC=100C -4 -25C (1) 20 10 (3) (4) 0 0 20 40 (2) - 0.5 -2 0 60 80 100 120 140 160 0 -1 -2 -3 -4 -5 -6 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 IC/IB=10 -30 -10 -3 -1 25C TC=100C -25C 10000 hFE -- IC 10000 VCE=-4V 3000 1000 300 100 30 10 3 fT -- IC VCE=-5V f=10MHz TC=25C Forward current transfer ratio hFE 1000 300 100 30 10 3 1 - 0.01 - 0.03 - 0.1 - 0.3 25C TC=100C -25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 Transition frequency fT (MHz) -1 -3 -10 3000 -1 -3 -10 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) -100 -30 103 Non repetitive pulse TC=25C Rth(t) -- t (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) Thermal resistance Rth(t) (C/W) Collector current IC (A) 102 -10 -3 -1 ICP t=10ms IC DC 10 (2) - 0.3 - 0.1 - 0.03 - 0.01 -1 1 10-1 -3 -10 -30 -100 -300 -1000 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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